The concept of a field-effect transistor (FET) was first proposed by Julius Edgar Lilienfeld, who received a patent for his idea in 1930. He proposed that a field-effect transistor behaves as a capacitor with a conducting channel between a source and a drain electrode. Applied voltage on the gate electrode controls the amount of charge carriers flowing through the system. The first insulated-gate field-effect transistor was designed and prepared by Mohamed Atalla and Dawon … WebDec 5, 2024 · Secondly, scientific efforts are being re-oriented towards enabling real-world applications, thus making the often overlooked dynamic (or ac) behaviors of an OFET a key device criterion. In 2016, Perinot et al reported on the direct-written polymer transistors operating at 20 MHz [ 12 ], but still the maximum frequency of OFETs stays far below that …
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